| 摘要 |
<p>PURPOSE:To dice a semiconductor wafer into individual chips at an improved yield rate by protecting semiconductor devices from cracks or breakage or loss by a method wherein one or more layers of amorphous film are formed in a substrate region corresponding to a scribe line and a notch is created from above the amorphous film by means of a dividing means for the dicing of the wafer into individual chips. CONSTITUTION:On a GaAs substrate 11, a Ti/Pt/Au wiring film is formed by lift-off for a wafer structure. The entire surface of the wafer is covered by an amorphous silicon nitride film 15 formed by means of CVD to serve as a MES FET passivation film. The result is a wafer structure wherein a scribe line 12 is covered by the silicon nitride film 15. Next, a scriber or dicing saw or the like is actuated, for the formation of a notch 16 along the scribe line 12 from above the amorphous silicon nitride film 15. The wafer is then removed from the scriber or dicing saw or the like. Pressure is applied to the wafer from the rear side of the adhesive sheet for the high-yield dicing of the wafer into the multiplicity of MES FETs 12 built on the GaAs substrate 11.</p> |
