发明名称 Method of forming pattern
摘要 Using a resist composition which exhibits decreased solubility in an organic solvent upon exposure, patterning is conducted by a negative-tone development using a developing solution containing an organic solvent to form a first resist pattern on the substrate, wherein the first resist pattern is composed of a plurality of exposed portions. Then, a pattern reversing composition containing an organic solvent which does not dissolve the first resist pattern is applied to the substrate on which the first resist pattern has been formed, to form a pattern reversing film. Next, the first resist pattern is removed and patterning of the pattern reversing film is conducted by an alkali developing to form a reversed pattern in which the image of the first resist pattern is reversed.
申请公布号 US9529266(B2) 申请公布日期 2016.12.27
申请号 US201414579718 申请日期 2014.12.22
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 Oikawa Tomohiro;Tanno Kazuishi
分类号 G03F7/30;G03F7/40;G03F7/038 主分类号 G03F7/30
代理机构 Knobbe Martens Olson & Bear LLP 代理人 Knobbe Martens Olson & Bear LLP
主权项 1. A method of forming a pattern, comprising: applying a resist composition which exhibits decreased solubility in an organic solvent upon exposure is applied to a substrate to form a first resist film, exposing the first resist film, subjecting the exposed first resist film to patterning by negative-tone developing using a developing solution containing an organic solvent to form a first resist pattern; applying a pattern reversing composition containing an organic solvent which does not dissolve the first resist pattern to the substrate on which the first resist pattern has been formed, so as to form a pattern reversing film, and subjecting the pattern reversing film to alkali developing treatment using an alkali developing solution to remove the first resist pattern and to conduct patterning of the pattern reversing film, so as to form a reversed pattern of the first resist pattern, wherein the dissolution rate of the pattern reversing film in an alkaline developing solution is 1.0 to 3.5 nm/s, and the pattern reversing composition comprises: a base component (A″) which forms a pattern reversing film and contains a resin component (A″1) represented by general formula (A″1-11) or (A″1-12) shown below; and an organic solvent (S′) comprising at least one member selected from the group consisting of butyl acetate, ethyl-3-ethoxypropionate, 1-butoxy-2-propanol, isobutanol, 4-methyl-2-pentanol and n-butanol: wherein R20 each independently represents a hydrogen atom or an alkyl group of 1 to 5 carbon atoms; R6 represents an alkyl group of 1 to 5 carbon atoms; p represents an integer of 1 to 3; and q represents an integer of 0 to 2; R4 represents an alkyl group of 1 to 5 carbon atoms; r represents an integer of 1 to 3; R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; Va1 represents a divalent hydrocarbon group which may contain an ether bond, an urethane bond or an amide bond; na1 represents an integer of 0 to 2; and Ra1′ represents an acid dissociable group represented by the formula (a1-r-2) shown below: wherein Ra′4 to Ra′6 each independently represents a hydrocarbon group, provided that Ra′5 and Ra′6 may be mutually bonded to form a ring; wherein R20 each independently represents a hydrogen atom or an alkyl group of 1 to 5 carbon atoms; R6 represents an alkyl group of 1 to 5 carbon atoms; p1 represents an integer of 1 to 3; q1 represents an integer of 0 to 2; R8 represents an alkyl group of 1 to 5 carbon atoms; p2 represents an integer of 1 to 3; q2 represents an integer of 0 to 2; and Ra1″ represents an acid dissociable group represented by the formula (a1-r-1) shown below: wherein Ra′1 and Ra′2 represents a hydrogen atom or an alkyl group; and Ra′3 represents a hydrocarbon group, provided that Ra′3 may be bonded to Ra′1 or Ra′2 to form a ring.
地址 Kawasaki-Shi JP