Predicting pattern critical dimensions in a lithographic exposure process

摘要

A method for predicting pattern critical dimensions in a lithographic exposure process includes defining relationships between critical dimension, defocus, and dose. The method also includes performing at least one exposure run in creating a pattern on a wafer. The method also includes creating a dose map. The method also includes creating a defocus map. The method also includes predicting pattern critical dimensions based on the relationships, the dose map, and the defocus map.

主权项

1. A method, comprising exposing patterns on a wafer to radiation and predicting a critical dimension map of the patterns exposed on a wafer by a scanner which generates signals during the exposure of the patterns on the wafer, the critical dimension map being predicted from the signals generated by the scanner during exposure of the patterns on the wafer, wherein the critical dimension map is predicted in situ with respect to the scanner, and further comprising creating a dose map and a defocus map, wherein the critical dimension map is predicted using the dose map and the defocus map.