发明名称 FIELD EFFECT TRANSISTOR CIRCUIT
摘要 PURPOSE:To simplify or omit a matching circuit by adopting the constitution of a field effect transistor (TR) circuit so that a feedback circuit is added between a drain of a dual gate FET and the 1st or 2nd gate. CONSTITUTION:A signal inputted to the 1st gate 4 through the matching circuit 9 is mixed with a local oscillation signal inputted to the 2nd gate 5 through the matching circuit 9 at the dual gate FET 2. The added feedback circuit has a filter 11, which passes through an intermediate frequency signal only, then the feedback circuit does not act by the inputted signal and the local oscillation signal and the frequency mixing is attained by the dual gate FET. Thus, the matching circuit at the input side is used without any change and both the signals are matched separately, then good matching is attained and the separation of both the signals is very excellent as a feature of the dual gate FET. Thus, the matching circuit is simplified remarkable or omitted.
申请公布号 JPS61264903(A) 申请公布日期 1986.11.22
申请号 JP19850107381 申请日期 1985.05.20
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KANAZAWA KUNIHIKO;NISHIUMA MASAHIRO;HAGIO MASAHIRO;KAZUMURA MASARU
分类号 H03C1/36;H03D7/12 主分类号 H03C1/36
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