| 摘要 |
PURPOSE:To obtain the function as an inverter with low power consumption and a wide range of operation voltage by arranging the region which becomes the center of recombination of minority carriers in the first semiconductor region locally in this semiconductor region. CONSTITUTION:It is preferably that the region D which becomes the center of recombination of minority carriers is formed by producing the crystal defect in a semiconductor region Q1 by ion implantation because the region D can be formed with good controllability. For example, on the semiconductor substrate 1 in which a semiconductor region Q1 is formed in advance, a mask layer 11 having the windows opening on the semiconductor region Q1 is formed. Then, the region D is formed of the oxide SiOx of the material Si composing the semiconductor region Q1 by subjecting the semiconductor region Q1, e.g. to the implantation of oxygen ions 12 by using the mask layer 11 as a mask. |
