FORMING METHOD FOR AMORPHOUS SEMICONDUCTOR FILM

摘要

PURPOSE:To reduce the production of powder and to enable the accumulation of a uniform film even in a large area by executing in gas pressure which is specific for ion average free step in a vessel in the width of a sheath when radical-forming a raw gas to accumulate it on a substrate. CONSTITUTION:Gas containing hydrogen as exciting gas is supplied from an exciting gas supply port 13 to an ion source. Magnets 15 are disposed on the back and side surfaces of a plasma source 14 to form a cusp magnetic field 15a. An AC voltage is applied between a filament 16 and anode (wall) 17 to discharge, thereby generating a plasma. The plasma passes through a porous grid 18 to a reaction chamber 20 in which raw gas is supplied in advance from a raw gas inlet 19 to move by a dispersed magnetic field by an external magnetic field 21 to contact with raw gas (SiH4) to form a radical. Since a negative bias is applied to a substrate 22 in the chamber, cation in the plasma is accelerated to the substrate 22. A sheath of width SiS formed between the substrate 22 and the plasma is accumulated under the gas pressure of SiS