| 摘要 |
PURPOSE:To manufacture a thin-film semiconductor device having stable performance by thermally treating and crystallizing an silicon layer as an active region. CONSTITUTION:A selected meal is attached and formed onto one surface of a transparent insulating substrate 1, and patterned to shape a gate electrode 2. A transparent insulating layer 3 is stuck and formed onto the whole surface on the substrate 1 while coating the gate electrode 2. An silicon layer 4 as an active region in a thin-film semiconductor device is shaped onto the insulating layer 3. The whole constitution is irradiated by beams L in a predetermined wavelength region to thermally treat the silicon film 4, and the silicon film 4 is crystallized. The wavelength of projecting beams L is set to one in a region having absorptivity in single crystal silicon, and the material of the gate electrode 2 is also set to one in a region having absorptivity to beams with wavelengths within the range. A selected metal is attached and formed onto the whole surface, and patterned to shape a source electrode 5a and a drain electrode 5b. |
