| 摘要 |
PURPOSE:To enhance element isolation capability through the shield effect (a line of electric force is terminated to a conductive film and is not easily terminated to a semiconductor substrate at the bottom part of groove) by providing a conductive film grounded to the substrate within the groove provided for element isolation. CONSTITUTION:A groove, for example, in the depth of 0.6mum is formed to an element isolating region of a silicon substrate 31 and as a first insulation film, a plasma CVD SiO2 film 32, for example, is deposited in the thickness of 0.2mum. Next, the plasma CVD SiO2 film 32 is patterned in order to expose the substrate 31 at the specified part. Next, as the conductive film, a phosphorus-doped polycrystalline silicon film 33, for example, is left within the groove by the etch back. In this case, the ohmic contact between the substrate 31 and polycrystalline silicon film 33 can be attained at the area where the substrate 31 is exposed, and the polycrystalline silicon film 33 is grounded to the substrate 31. Next, as a second insulation film, the CVD SiO2 film 34, for example, is deposited in the thickness of 2mum on the entire part of it and the surface is flattened. Next, such film is etched by the RIE until the silicon substrate surface of element forming region is exposed, and the entire part of substrate is flattened.
|
