发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To improve the reliability of connecting a semiconductor region to wiring by a method wherein a semiconductor region and the first wiring layer on it, the first wiring layer and the second wiring layer on it are provided, and they are connected through plural connection holes so that the connection holes are not overlapped. CONSTITUTION:A connection hole 13 and a connection hole 15 are arranged substantialy on one line and provided one after another. Thus, the width of a conductive layer 11 at the upper part of a semiconductor region 6 is reduced, improving the degree of integrity of a semiconductor integrated circuit device, Moreover, the conductive layers 11 and 15 are connected electrically favorable, with improved electrical reliability of a semiconductor integrated circuit device.
申请公布号 JPS61296757(A) 申请公布日期 1986.12.27
申请号 JP19850137781 申请日期 1985.06.26
申请人 HITACHI LTD;HITACHI VLSI ENG CORP 发明人 OOSHIMA KAZUYOSHI;ONO KUNIO;KATO SHIGENOBU
分类号 H01L27/10;H01L21/768;H01L21/822;H01L21/8242;H01L23/522;H01L27/04;H01L27/08;H01L27/108 主分类号 H01L27/10
代理机构 代理人
主权项
地址