| 摘要 |
PURPOSE:To easily calculate the presence or thickness of a processed deteriorated layer, by measuring the 1/4 width and 1/8 width of diffracted X-rays simultaneously with the half band width thereof and observing the relation with the removed thickness of a processed layer by an etching solution. CONSTITUTION:An incident side solar slit 1, an emitting slit 2, a light receiving slit 3 and a scattering slit 5 are provided and each slit system is set to the min. width and the upper and lower parts of the slit 2 are covered with lead or a thick circular hole shaped slit is used as said slit 2. Incident monochromatic X-rays 6 are diffracted by a specimen while diffracted X-rays 8 are allowed to irradiate an X-ray detector 9 to measure the intensity of X-rays. At this time, in order to avoid the effect of the diffraction rays corresponding to CmuKalpha1 rays, observation is performed in a high angle side and scanning recording is repeated while a processed deteriorated layer is removed by acid etching. As diffracted X-rays change from a half band width to a 1/4 width and further to a 1/8 width, the change in a line width with the removal of the processed deteriorated layer becomes large and a case for measuring the change in the 1/4 width and 1/8 width is high in the sensitivity to the removal of the processed deteriorated layer as compared with a case for measuring a half band width.
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