| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory, a memory device and a volatile recording medium which are formed by use of a titanium oxide having the composition, TiOand which data can be written into.SOLUTION: A memory element 6 is formed from a titanium oxide having the composition, Ti0, which causes a phase transition from a β phase of non-magnetic semiconductor to a λ phase of a paramagnetic metal state, differing from the β phase in resistance value, when supplied with a write current of 0.2-0.4 [A mm] in a range up to 460 [K]. In a memory device, when writing data into a memory cell, a write current is caused to pass through only the memory cell, whereby a memory element 6 of the memory cell 2a is caused to transition in phase from the β phase titanium oxide of to the λ phase titanium oxide. Thus, the data is written into the memory cell by changing the memory element 6 in resistance value.SELECTED DRAWING: Figure 11 |
