SUBSTRATE PROCESSING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To suppress the deposition of a reaction product or decomposition product on the inner wall of a nozzle, and to suppress the dispersion of a foreign material in a processing chamber.SOLUTION: A substrate processing apparatus comprises: a processing chamber 201 which houses a plurality of substrates 200; a heating unit 207 for heating inside the processing chamber; a material gas-supplying unit disposed at a given position in the processing chamber where a material gas is not decomposed in the processing chamber even if the temperature in the processing chamber is higher than the thermal decomposition temperature of the material gas, and having a material gas nozzle 233a for supplying the material gas into the processing chamber; a reactive gas-supplying unit for supplying a reactive gas into the processing chamber; an inert gas-supplying unit for supplying an inert gas to the material gas-supplying unit and the reactive gas-supplying unit; and a control part 280 arranged to heat the inside of the processing chamber, to supply the inert gas to the material gas nozzle at different flow rates, and to execute a cycle including a plurality of processing for supplying the material gas into the processing chamber and processing for supplying the reactive gas into the processing chamber a given number of times, thereby forming a film on each substrate.SELECTED DRAWING: Figure 2