| 摘要 |
PURPOSE:To improve reliability and to simplify manufacturing, by providing a black protecting film on the side of a photoelectric conversion part, which is not a light receiving surface. CONSTITUTION:A black protecting layer 26 is provided on the side of a photoelectric conversion part 25 comprising a semiconductor layer 22. Said side is not a light receiving surface. For example, on a glass substrate 21, non-doped amorphous silicon (a-Si) is formed as a semiconductor layer 22, which is to become a light conducting layer, by a glow discharge decomposition method. ON the layer 22, a-Si, in which impurities are doped by the glow discharge decomposition method, 24-2 are formed. Thereafter, the impurity doped a-Si in a photoelectric conversion part is removed by dry etching, and ohmic contact layers 23-1 and 23-2 are formed. Then, on the photoelectric conversion part 25, black organic silicone, whose amount of Na inclusion is 2ppm or less, is applied by a screen printing method. Then the silicone is heated at a temperature of 150 deg.C for four hours and hardened. Thus the black protecting layer 26, which also serves a role of a light shielding layer, is formed.
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