| 摘要 |
PURPOSE:To reduce memory cell area and to prevent soft errors that may be caused by alpha-rays by a method wherein it is so arranged that the capacity of a memory node is divided into two regions, one on the side of a semiconductor substrate and the other on the side of an electrodes and a transistor and the memory node are isolated from the semiconductor substrate. CONSTITUTION:An insulating layer 21 is formed on a semiconductor substrate 11 and on the surface of a groove. In the insulating layer 21 and in the groove, a drain region 31, channel forming region 41, and source region 51 are formed of a single-crystal silicon layer, which, together with a gate 81, constitute a transfer transistor that is a memory cell. With the drain region 31 and a memory capacitor memory node 61 being completely isolated from the substrate 11, no ill effect will be exerted by electron-hole pairs to be generated in the semiconductor substrate 11 under alpha-ray illumination, which prevents soft errors. |
