| 摘要 |
PURPOSE:To make it possible to form a P-N junction and an electrode by a simple process, by including a process for forming the metal electrode on a P-type silicon substrate, a process for annealing using the projection of an electron beam, and a process for forming an N-type layer. CONSTITUTION:A tungsten film having a thickness of about 0.1mum is formed on the surface of a P-type silicon substrate 1. Then, patterning is performed and a tungsten electrode 2 having an area of 5X5mum<2> is formed. Thereafter, an electron beam is projected to a region including the tungsten electrode 2 for 5X10<-4>sec from an electron beam annealing apparatus. A defect introduced layer 3 is formed to a depth of about 0.1mum in the surface of the P-type silicon substrate 1 beneath the tungsten electrode 2. Then, heat treatment is performed in a nitrogen atmosphere in an electric furnace, and an N-type layer 4 in 5X5mum<2> square is formed to a depth of about 0.1mum only beneath the tungsten electrode 2. By these simple processes, the P-N junction and the electrode can be formed with excellent controllability.
|
