| 发明名称 |
Bipolar transistor having an implanted extrinsic base region. |
| 摘要 |
<p>A bipolar fabrication process uses the emitter contact resist mask, used when cutting the emitter contact (13), as an implantation mask during implantation of the extrinsic base region (14). The resist prevents unwanted doping of the emitter contact (13).</p> |
| 申请公布号 |
EP0244171(A1) |
申请公布日期 |
1987.11.04 |
| 申请号 |
EP19870303660 |
申请日期 |
1987.04.24 |
| 申请人 |
BRITISH TELECOMMUNICATIONS PUBLIC LIMITED COMPANY |
发明人 |
WELBOURN, ANTHONY DAVID;CHANDLER, TIMOTHY JOHN |
| 分类号 |
H01L21/331;H01L29/10 |
主分类号 |
H01L21/331 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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