发明名称 GATE DRIVE CIRCUIT
摘要 PURPOSE:To send a signal from a pulse transformer without attenuation and to improve the tracking performance to a high speed signal by eliminating the effect of a diode built in a field effect transistor (TR). CONSTITUTION:One terminal of the secondary side of a pulse transformer 1 is connected to a source of the 1st field effect TR 2 and a gate of the 2nd field effect TR 3, and the other terminal of the secondary side of the pulse transformer 1 is connected respectively to the gate of the 1st field effect TR 2 and the source of the 2nd field effect TR 3. Thus, the diode built in the 1st field effect TR 2 gives no effect on driving the 3rd field effect TR 5, thereby stably driving the 3rd field effect TR 5 at a high speed, and reducing the switching loss and improving the reliability.
申请公布号 JPS62254518(A) 申请公布日期 1987.11.06
申请号 JP19860096944 申请日期 1986.04.28
申请人 MATSUSHITA SEIKO CO LTD 发明人 SAKAMOTO KIYOUYA;MORITSUGU JIRO
分类号 H03K17/08;H03K17/687;H03K17/691 主分类号 H03K17/08
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