| 摘要 |
PURPOSE:To enable omission of bus lines for an overflow drain electrode and for an overflow control electrode, and to facilitate formation in high density of a solid-state image sensing device by a method wherein a p-n junction is formed by double diffusion at a position corresponding to a storage electrode, and a potential difference is provided between a substrate and a photoelectric substrate. CONSTITUTION:To a part of the region of a storage electrode 3 on the substrate 9 (p-type) of an Si CCD, p-n junction 10, 11 constructed by double diffusion is formed, the p-side 10 of the p-n junction and an input control electrode 2 are connected, and an electric power source 12 to provide an electric potential difference between the substrate 9 and a photoelectric conversion diode 8 is provided. Accordingly, bus lines for an overflow drain electrode and for an overflow control electrode can be omitted, the decrease of the area of the storage electrode can be checked according thereby, the decrease of the amount of allowable electric charge can be omitted, and a solid-state image pickup device of high quality, high density can be obtained. |
