| 摘要 |
PURPOSE:To enhance the punch-through breakdown strength of the title MOSFET and to prevent disconnection of an aluminum wiring and the like by a method wherein, after a gate part has been anisotropically etched by implanting impurities into the active region whereon a source and a drain will be formed, the source and the drain regions are formed by performing an activating operation, and the surface of the gate part is flattened by depositing a conductive material thereon. CONSTITUTION:A gate part G is formed by anisotropically etching an ion-implanted layer 6 in gate shape. Then, after a resist has been removed, the ion-implanted layer 6 is activated by heating a substrate, an oxide film 1 is formed on the surface of the layer 6, and when a polysilicon 2 is deposited on the surface of the oxide film 1, the activated regions located at both ends of the gate part G are turned to source and drain regions 3 and 4. The junction face of the source and the drain regions 3 and 4 and the substrate S is formed on the surface almost same as the gate part G, or a little shallower than the above. Then, the above-mentioned surface is flattened by etching, a polycrystalline silicon 2 is deposited on the gate part G, and after a CVD oxide film 5 has been deposited on the surface, the source and the drain regions 3 and 4 and the polysilicon 2 of the gate part are connected.
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