| 摘要 |
PURPOSE:To prevent deterioration of the characteristics of a grown layer of a crystal, occurrence of cracks, orrurrence of warping in a substrate and the like, by performing epitaxial crystal growing under the state the semiconductor substrate is warped beforehand. CONSTITUTION:A semiconductor substrate 1 is warped by an amount corresponding to strain, which is yielded by the difference in thermal expansion coefficients between the semiconductor substrate 1 and an epitaxial crystal growth layer 2. For this purpose, the semiconductor substrate 1 is fixed and provided on a suscepter 3 with fixing metal jigs 4 for fixing the substrate. The temperature of the substrate 11 is increased during the temperature increasing process (b) in the cryustal growing processes. The epitaxial crystal growth layer 2 is formed on the semiconductor substrate 1 during the growing process (c). After the substrate fixing metal jigs 4 are removed, the temperature is decreased during the temperature decreasing process (d). Then the formation of the epitaxial crystal growth layer 2 is completed. Warping, which is going to yield due to the difference in thermal expansion coefficients between the semiconductor substrate 1 and the epitaxial crystal growth layer 2 during the decrease in temperature, is offset by a returning force of the semiconductor substrate 1, which is warped beforehand. After the completion of the temperature decrease, warping is not caused in the semiconductor substrate.
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