发明名称 A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE MASTER SLICE TECHNIQUE
摘要 A method of manufacturing a semiconductor device using the master slice technique includes the formation of both an N-channel MIS field effect transistor Tn2 and a P-channel MIS field effect transistor Tp2 in a final output stage of the device. Then during the customising step an output wire LI is connected to the drain of only one of the N-channel MIS field effect transistor Tn2 and the P-channel MIS field effect transistor Tp2 to form an integrated circuit of an N-channel open-drain output type or a P-channel open-drain type. This enables the output type to be chosen to suit the particular circuit prepared by the customising step using only simple processing and very quickly.
申请公布号 DE3374492(D1) 申请公布日期 1987.12.17
申请号 DE19833374492 申请日期 1983.08.19
申请人 FUJITSU LIMITED 发明人 SHIRATO, TAKEHIDE;WADA, KENSAKU;YUASA, KOUICHI
分类号 H01L21/82;H01L21/822;H01L21/8238;H01L23/525;H01L27/04;H01L27/092;H01L27/118;H01L29/78;(IPC1-7):H01L23/52;H01L27/08 主分类号 H01L21/82
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