发明名称 |
A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE MASTER SLICE TECHNIQUE |
摘要 |
A method of manufacturing a semiconductor device using the master slice technique includes the formation of both an N-channel MIS field effect transistor Tn2 and a P-channel MIS field effect transistor Tp2 in a final output stage of the device. Then during the customising step an output wire LI is connected to the drain of only one of the N-channel MIS field effect transistor Tn2 and the P-channel MIS field effect transistor Tp2 to form an integrated circuit of an N-channel open-drain output type or a P-channel open-drain type. This enables the output type to be chosen to suit the particular circuit prepared by the customising step using only simple processing and very quickly. |
申请公布号 |
DE3374492(D1) |
申请公布日期 |
1987.12.17 |
申请号 |
DE19833374492 |
申请日期 |
1983.08.19 |
申请人 |
FUJITSU LIMITED |
发明人 |
SHIRATO, TAKEHIDE;WADA, KENSAKU;YUASA, KOUICHI |
分类号 |
H01L21/82;H01L21/822;H01L21/8238;H01L23/525;H01L27/04;H01L27/092;H01L27/118;H01L29/78;(IPC1-7):H01L23/52;H01L27/08 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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