| 摘要 |
PURPOSE:To easily produce a large-sized compd. semiconductor single crystal by providing plural compd. semiconductor single crystals, and newly growing a homogeneous single crystal between the single crystals, and integrating the crystals into one single crystal. CONSTITUTION:Previously produced GaAs single crystals 8 are arranged on a graphite susceptor 4 in the high temp. chamber 2 of a quartz reaction tube 1 three-by-three in the longitudinal and lateral directions at intervals 9 (about 1mm). In this case, the (100) face is directed upward, and the parallelism between the respective (110) cleavage planes is controlled to about 5min. Ga 10 is filled between the respective single crystals 8, and As 11 is charged in the low-temp. chamber 3 of the reaction tube 1. Under such conditions, an upper heater 5 and a lower heater 6 are respectively heated to about 1,100 deg.C and to about 1,000 deg.C, and the pressure in the reaction tube 1 is kept at 1atm by energizing a subheater 7. Heating is stopped after a specific time to cool the inside of the reaction tube 1, hence a GaAs single crystal is grown in the gap 9, the nine GaAs single crystals 8 are integrated, and a large-sized GaAs wafer is obtained.
|
