| 摘要 |
<p>In a CVD method, a wafer (3) is retained on a wafer holder (2) in a reaction tank or chamber (1) to be put under reduced pressure. At least one through hole is made in an insulating film formed on a substrate of the wafer (3) and a first metallic film is formed in the through hole. A gas containing a metallic element, such as WF6, and a reduction gas such as H2 are introduced into the reaction chamber (1) under reduced pressure through inlets (4a, 4b). Radiation from a heating lamp (8) is directed on to the wafer (3) so that a temperature difference arises between the insulating film and the first metallic film, as a result of differences of absorption rates of the radiation between the insulating film, the substrate and the first metallic film. Accordingly, a chemical reaction is effected only on the first metalic film, so that a second metallic film of the metallic element is formed on the first metallic film. The metallic element containing gas and the reduction gas may be introduced in a sheet-like manner substantially parallel to the surface of the wafer (3) by shaping the inlets (4a, 4b) so that their width is much less than their length. An inert gas or a gas containing mainly inert gas is introduced through a perforated plate (6a) towards the surface of the wafer (3) so that the reaction gases maintain laminar flow (R, R').</p> |
