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发明名称
半导体装置
摘要
申请公布号
TW095331
申请公布日期
1988.01.16
申请号
TW076204021
申请日期
1987.05.02
申请人
新力股份有限公司
发明人
小林三辉也
分类号
H01L23/12
主分类号
H01L23/12
代理机构
代理人
何金涂 台北巿大安区敦化南路二段七十七号八楼
主权项
一种半导动装置,其特征是在形成于印刷基板上之电路元件或贯穿孔上形成平坦化层,然后将半导体晶片装载在上述之平坦化层上而形成。
地址
日本东京都品川区北品川六丁目七番三五号
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