| 摘要 |
A dielectric composition comprising a base of non-stoichiometric lead magnesium niobate, non-stoichiometric lead zinc niobate, lead zirconate, titanium dioxide and bismuth titanate, together with a further oxide additive, in particular nickel oxide, manganese oxide, cobalt oxide or a rare earth, has a low firing temperature (900 DEG -1000 DEG C.), high dielectric constant (up to 14,750), low tan delta (<2.5% at 20 DEG C.) and Z5U temperature coefficient of capacitance.
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