Phase change memory having a funnel-shaped heater and method of manufacturing the same

摘要

A method of manufacturing a phase change memory includes: (i) forming a first dielectric layer, a conductive contact and a first electrode over a semiconductor substrate; (ii) forming a second dielectric layer having an opening over the first dielectric layer, the opening exposing a top surface of the first electrode; (iii) forming a barrier layer lining a sidewall of the opening; (iv) forming a phase change element in the opening, wherein the phase change element includes a base and a peripheral wall extending upwards along the barrier layer from a periphery of the base, and an inner side of the peripheral wall defines a recess having an inlet and a bottom portion; (v) forming a heater filled in the recess; and (vi) forming a second electrode over the heater. A phase change memory is disclosed herein as well.

主权项

1. A phase change memory, comprising:
a first electrode; a phase change element comprising:
a base in contact with the first electrode; anda peripheral wall extending upwards from a periphery of the base, wherein the peripheral wall has an inner side defining a recess having an inlet and a bottom portion, and a width of the inlet is greater than a width of the bottom portion; a heater embedded in the recess, wherein the heater includes an upper portion and a lower portion, a width of the upper portion equals to the width of the inlet of the recess, and a width of the lower portion equals to the width of the bottom portion of the recess; an auxiliary electrode extended from the upper portion of the heater and having a width the same as a width of the upper portion; and a second electrode positioned over the heater.