Methods of forming punch through stop regions on FinFET devices on CMOS-based IC products using doped spacers

摘要

One illustrative method disclosed herein includes, among other things, forming a first plurality of fins for a type 1 device and a second plurality of fins for a type 2 device, forming a first counter-doped sidewall spacer structure adjacent the first fins, forming a second counter-doped sidewall spacer structure adjacent the second fins and a counter-doped material structure in a space between the first fins, forming a recessed layer of flowable oxide on the devices such that portions of the first and second counter-doped sidewall spacers are exposed above the flowable oxide layer, and performing a common etching process operation to remove at least a portion of the exposed portions of the first and second counter-doped sidewall spacer structures.

主权项

1. A method comprising:
forming a first plurality of fins for a type 1 device and a second plurality of fins for a type 2 device, wherein said type 1 and said type 2 devices are opposite type devices; forming a first counter-doped sidewall spacer structure adjacent each of said first plurality of fins, said first counter-doped sidewall spacer comprising a first material comprising silicon dioxide and a type 2 dopant; performing at least one first process operation to form a second counter-doped sidewall spacer structure adjacent each of said second plurality of fins, said second counter-doped sidewall spacer comprising a second material comprising silicon dioxide and a type 1 dopant that is opposite to said type 2 dopant, wherein performing said at least one first process operation fills a space between said first plurality of fins with said second material so as to define a recessed second material structure with a first recessed upper surface that is positioned at a level below an upper surface of said first plurality of fins; forming a recessed layer of flowable oxide having a second recessed upper surface on said type 1 and said type 2 devices, wherein, after said recessed layer of flowable oxide is formed, a portion of said first counter-doped sidewall spacer is exposed above said second recessed upper surface and a portion of said second counter-doped sidewall spacer structure is exposed above said second recessed upper surface; and performing a common etching process operation to remove at least a portion of said exposed portion of said first counter-doped sidewall spacer structure and to remove at least a portion of said exposed portion of said second counter-doped sidewall spacer structure so as to reveal at least a portion of said first and second plurality of fins, respectively.