发明名称 |
Semiconductor light-emitting device and method of manufacturing the same. |
摘要 |
<p>An active layer is formed on an n-type InP buffer layer (11) of a substrate (10). A pair of strip-shaped grooves are formed into the active layer to divide it into a contract portion (12a) and side portions. A p-type InP cladding layer (15) is deposited on the entire surface of the active layer and grooves. The cladding layer (15) is selectively etched to form a mesa portion including the central active portion (12a) and expose the buffer layer (11). An insulating film (18) is coated on the mesa portion and buffer layer, so that a semiconductor light-emitting device is manufactured.</p> |
申请公布号 |
EP0260909(A2) |
申请公布日期 |
1988.03.23 |
申请号 |
EP19870308096 |
申请日期 |
1987.09.14 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KINOSHITA, JUN'ICHI C/O PATENT DIVISION;MORINAGA, MOTOYASU C/O PATENT DIVISION;FURUYAMA, HIDETO C/O PATENT DIVISION;HIRAYAMA, YUZO C/O PATENT DIVISION |
分类号 |
H01S5/227;(IPC1-7):H01S3/19;H01L33/00 |
主分类号 |
H01S5/227 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|