| 摘要 |
PURPOSE:To improve sensitivity to high energy radiation, more particularly electron rays and X-rays, definition and dry etching resistance by using a specific polymer obtd. by bringing a polyme contg. The structure in which an arom ring is substd. with a carbonyl group into halogenation reaction. CONSTITUTION:The radiation sensitive resist material which is the polymer obtd. by bringing the polymer contg. the repeating unit expressed by the formula I into the halogenation reaction is used as the radiation sensitive material. In the formula I, R denotes a hydrogen atom or alkyl group of 1-3C, X1-X3 denote a hydrogen atom or halogen atom. After the polymer obtd. in such a manner is dissolved in a solvent, the soln. is filtered to prepare a resist soln. The soln. is coated on a substrate by a spin coating method to form a uniform thin resist film. The film is exposed by the radiation such as electron rays of X-rays and is developed to obtain the resist image. The substrate is thereafter dry-etched with the resist image as a mask, by which the substrate is subjected to fine working. |
