| 发明名称 |
Structure for passivating a PN junction |
| 摘要 |
A technique for passivating a PN junction adjacent a surface of a semiconductor substrate comprises coating the area of the surface adjacent the PN junction with a layer of hydrogenated amorphous silicon containing between about 5 and about 50 atomic percent of hydrogen.
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| 申请公布号 |
US4742384(A) |
申请公布日期 |
1988.05.03 |
| 申请号 |
US19830476722 |
申请日期 |
1983.03.18 |
| 申请人 |
RCA CORPORATION |
发明人 |
PANKOVE, JACQUES I.;TARNG, MING L. |
| 分类号 |
H01L21/314;H01L23/29;(IPC1-7):H01L29/34 |
主分类号 |
H01L21/314 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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