发明名称 |
Method for producing a protective arrangement for a field-effect transistor |
摘要 |
The invention relates to a protective arrangement for field-effect transistors with an insulated gate electrode. An integrated, indiffused protective diode whose breakdown voltage is smaller than that of the gate insulating layer is used therefor. The gist of the invention is that the breakdown voltage of the protective diode is set by two implantation processes, one of which is substantially limited to the region containing the in-diffused diode and the other of which substantially covers the surface of the substrate other than at least the channel region of the field-effect transistor so as to simultaneously increase the field inversion voltage.
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申请公布号 |
US4742015(A) |
申请公布日期 |
1988.05.03 |
申请号 |
US19870035265 |
申请日期 |
1987.04.06 |
申请人 |
TELEFUNKEN ELECTRONIC GMBH |
发明人 |
OHAGEN, MANFRED |
分类号 |
H01L21/265;H01L27/02;H01L29/06;H01L29/08;(IPC1-7):H01L21/385;H01L21/425 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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