Thin-film field-effect transistor employing amorphous silicon

摘要

A thin-film FET employing amorphous silicon is doped and structured in such a way that it is particularly usable in liquid-crystal display circuits. Critical FET dimensions which permit an optimum reduction in the source-gate capacitance and at the same time prevent large contact voltage drops occurring are specified, along with doping values and positions. The critical dimensions comprise the active channel length (L), the source-gate overlap (d) and the thickness (t) of the amorphous silicon. A critical mutual relationship is also specified for these parameters and the doping values of the amorphous silicon. <IMAGE>