| 摘要 |
PURPOSE:To produce a semiconductor laser device low in threshold current, high in differential quantum efficiency, and high in yield by a method wherein an amorphous insulating material is embedded along both sides of an active region. CONSTITUTION:An active layer 1, an n-InP clad layer 2, and a p-InP clad layer 3 are formed in a double heterojunction. A p<+>-InGaAsP contact layer 4 and an n-Inp layer 5 constitute a reverse bias P-M junction. The P<+>-InGaAsP contact layer 4, in addition, serves as an etching stopper layer for the n-Inp layer 5. Use of an amorphous insulating material 6 embedded results in a zero leak current from the upper clad layer of the active layer and ensures a high external quantum efficiency. In this way, further, embedded layers may be homogeneous and yield of chips may be high. |
