| 发明名称 |
Low drift emitter base oxide zener. |
| 摘要 |
<p>An EBO zener is provided with an additional gate oxide layer (20) at the breakdown junction which provides a reduction in the breakdown voltage drift with time normally associated with such a device.</p> |
| 申请公布号 |
EP0273142(A2) |
申请公布日期 |
1988.07.06 |
| 申请号 |
EP19870116270 |
申请日期 |
1987.11.05 |
| 申请人 |
MOTOROLA INC. |
发明人 |
CAVE, DAVID L. |
| 分类号 |
H01L29/732;H01L21/331;H01L29/73;H01L29/866;(IPC1-7):H01L29/90 |
主分类号 |
H01L29/732 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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