| 摘要 |
The invention describes a method of fabricating an EEPROM semiconductor memory cell with tunnel current programming in dual polysilicon-NMOS technology, in which, after producing a nitride/oxide sandwich insulation (7, 8), an oxidation is carried out in a moist atmosphere at 850@C. In this oxidation, spacers (10) are oxidised onto the edges of the nitride layer. <IMAGE>
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