VERFAHREN UND VORRICHTUNG ZUR ZUECHTUNG VON VERBINDUNGSHALBLEITER-EINKRISTALLEN

摘要

A method of growing single crystals of semiconductor compounds in which a volatile element 12 is placed in a low temperature portion of a boat 13 and a metal in a higher temperature portion of the boat. An electric furnace heats a quartz ampoule containing the boat to form a molten semiconductor compound from the reactants by the temperature-gradient freezing method or the horizontal Bridgman method. A heat sink 21 is connected to the seed end of said boat and a cooling pipe 22 leading to the outside of the furnace. Auxiliary heaters 24 around said heat sink and boat ensure that heat is always supplied from the boat circumference to the molten semiconductor so that the temperature inside the boat is lower than that outside the boat. A high pressure embodiment is also described. <IMAGE>