发明名称 Plasma reactor for CVD.
摘要 <p>A cold-wall single-wafer rapid thermal/microwave remote plasma multiprocessing reactor is disclosed, comprising a vacuum chamber (10) having means (14) for mounting a wafer (12) in the chamber (10), means (36) for providing optical flux mounted adjacent one wall facing the back side of the wafer (12) for optical heating of the wafer (12), and ports (18, 20) for plasma injection such that remote plasma can be generated and guided into the chamber (10). Ports are provided for gas injection both through the plasma generating chamber and for non-plasma injection (32). The plasma and non-plasma ports are connected through separate manifolds to a plurality of gas sources (30). The reactor design is such that several wafer processing steps can be done sequentially in-situ, while providing for optimization of each processing step.</p>
申请公布号 EP0291181(A2) 申请公布日期 1988.11.17
申请号 EP19880303505 申请日期 1988.04.19
申请人 THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY 发明人 MOSLEHI, MEHRDAD MAHMUD;SARASWAT, KRISHNA CHANDRA
分类号 H01L21/205;H01L21/31;C23C16/44;C23C16/48;C23C16/511;H01J37/32;H01L21/285 主分类号 H01L21/205
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