Field-effect transistor

摘要

A field-effect transistor having a high breakdown voltage has a p-semiconductor substrate (5), a plurality of pairs of source regions (S) and drain regions (D), which have respectively n<-> imperfection diffusion regions (3) formed in the substrate (5), gate electrodes (9), which are formed by an insulating film (2) lying on a region between each of the source regions (S) and each of the drain regions (D), n<+> imperfection regions (4), which are formed displaced by a constant amount in the n<-> imperfection layers (3), a source connection (7a) connecting a plurality of source regions (S), and a drain connection (7b), which connects a plurality of drain regions (D) in the plurality of pairs in such a way, that a deviation error caused by displacement is compensated. <IMAGE>