摘要 |
Employing the method, a semiconductor pattern can be provided with a superconductor pattern which has conductor zones composed of a superconducting metal oxide phase of a system of materials which comprises metallic components and oxygen, and has a high transition temperature. To this end, provision is made, according to the invention, for there being formed, on at least a portion of the semiconductor pattern (3), a thin layer (4) of a precursor (V) of the superconductor pattern having a microstructure defective in terms of the desired superconducting metal oxide phase, by means of a low-temperature deposition process which does not adversely affect the semiconductor pattern (3), and for said precursor (V) being converted, with the aid of brief thermal pulses (TP) into the desired superconducting metal oxide phase. <IMAGE>
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申请人 |
SIEMENS AG, 1000 BERLIN UND 8000 MUENCHEN, DE |
发明人 |
HOENIG, ECKHARDT, DR., 8520 ERLANGEN, DE |