发明名称 |
Method of forming completely metallized via holes in semiconductors |
摘要 |
A method is disclosed for forming completely metallized via holes in semiconductor wafers. Metal pads are formed on one face of a semiconductor wafer together with a conductive interconnecting network. An insulating layer is then deposited to cover this face of the wafer. Holes are etched in the opposite face of the wafer up to and exposing a portion of the metal pads. The via holes are then completely filled with metal by means of electroplating, using the metal pads as a cathode.
|
申请公布号 |
US4808273(A) |
申请公布日期 |
1989.02.28 |
申请号 |
US19880192343 |
申请日期 |
1988.05.10 |
申请人 |
AVANTEK, INC. |
发明人 |
HUA, CHANG-HWANG;DAY, DING-YUAN S.;CHAN, SIMON S. |
分类号 |
H01L21/74;H01L21/768;(IPC1-7):C25D5/02 |
主分类号 |
H01L21/74 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|