| 摘要 |
The invention relates to multilayer wiring for VLSI (very-large-scale-integrated) semiconductor components containing a multilayer dielectric which consists of polyimide (3) and silicon nitride layers (6, 8) and has through-connections (interfacial connections, feedthroughs) with oblique flanks (5), the flanks (5) of the through-connections being completely covered with silicon nitride (6), and to a method for the fabrication thereof. This in the first instance involves applying a polyimide layer (3) over the first metallisation plane (2) and subjecting it to thermal treatment. The through-connections are defined by means of a photoresist technique (4). In the subsequent reactive ion beam etching of the contact holes (vias), the oblique flanks (5) of the photoresist pattern (4) serving as the etching mask are transferred to the polyimide layer (3). The remaining photoresist pattern (4) is removed, a silicon nitride layer (6) is deposited over the whole area, is oxidised by means of anodic oxidation in the contact hole bottoms and finally removed. This achieves improved insulation of the polyimide layer (3) against absorption of moisture. The oblique flanks (5) of the contact holes ensure that the edges of the next metallisation plane are well covered. <IMAGE>
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