| 摘要 |
PCT No. PCT/JP83/00129 Sec. 371 Date Dec. 20, 1983 Sec. 102(e) Date Dec. 20, 1983 PCT Filed Apr. 26, 1983 PCT Pub. No. WO83/03922 PCT Pub. Date Nov. 10, 1983.A semiconductor device including a metal base, a metal case and a through-passage connecting the inside and outside of the metal case, an electric terminal which provides a bridge selectively deposited on an insulator base allowing formation of conductive layer thereon. The insulator base and the conductive layer are integrated with the insulator base and the combination is insertingly engaged with the through-passage of the metal base. A semiconductor element is fixed in the metal case, in which a pseudo-coaxial line structure is formed by the conductive layer, the insulator base, the insulator bridge and the metal case. Accordingly a device of the present invention is capable of stably operating even at a frequency of 10 GHz or higher. |
