发明名称 |
Image sensor having charge storage regions. |
摘要 |
<p>An image sensor includes a plurality of potential monitoring transistors (T21 - T24, T31 - T34) connected to respective floating electrodes (71 - 74) for separately monitoring changes in potential of the respective floating electrodes. In addition, the image sensor includes an output circuit (T25 - T27, R21; T35 - T37, R31) for producing an output signal (Vo(max), Vo(min)) which varies in accordance with one of the monitored potentials which is one of the highest potential and the lowest potential.</p> |
申请公布号 |
EP0311529(A2) |
申请公布日期 |
1989.04.12 |
申请号 |
EP19880402546 |
申请日期 |
1988.10.07 |
申请人 |
FUJITSU LIMITED |
发明人 |
TAKEI, AKIRA;NABETA, TERUYUKI;NISHIKAWA,TETSUO;NAGAI, EIICHI |
分类号 |
H01L21/339;H01L27/148;H01L29/762;H04N1/028;H04N5/335;H04N5/341;H04N5/369;H04N5/372;H04N5/374;H04N5/378 |
主分类号 |
H01L21/339 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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