MEMORY CIRCUIT WITH NOISE PREVENTING MEANS FOR WORD LINES

摘要

A memory circuit provided with improved noise preventing circuits allowing a high-density arrangement of memory cells is disclosed. The memory circuit comprises a cross-coupled circuit provided for adjacent two word lines. The cross-coupled circuit suppress the potential of one of the adjacent two word lines to a reference level when the other of the adjacent two word lines takes a selection level or a level near the selection level.