| 摘要 |
PURPOSE:To improve yield and to improve quality by forming an impurity diffused layer of a second mask alignment displacement detecting pattern on a field film in case of forming an impurity diffusing mask, forming a second mask alignment displacement detecting pattern in case of etching a first gate film, and aligning them therewith to form a gate electrode. CONSTITUTION:An impurity diffusing mask 6 having a second mask alignment displacement detecting pattern 5 in case of aligning a gate electrode is formed on a field film 2, an impurity diffused layer 7 is formed by ion implanting, and an impurity diffused layer 8 for forming a second mask alignment displacement detecting pattern is formed. After the mask material is removed, a first gate film 3 is removed by etching, a step is formed in the film 2, and the pattern 5 is formed. Then, a second gate film 9 and a polysilicon 10 for a gate electrode are formed, and aligned by the second mask alignment displacement detecting pattern, thereby forming a gate electrode 12. |
