发明名称 |
Semi-custom integrated circuit. |
摘要 |
<p>In a semi-custom integrated circuit, e.g. a bipolar analogue array, underpass areas are so configured as to permit operation as capacitors by suitable configuration of a user determined interconnection pattern. Typically each underpass comprises a highly doped region 15 disposed over a buried layer 14. A thin oxide layer is applied to the surface of the underpass. Suitable configuration of polysilicon and metal masks provides a cross-over or a capacitor.</p> |
申请公布号 |
EP0330299(A2) |
申请公布日期 |
1989.08.30 |
申请号 |
EP19890300333 |
申请日期 |
1989.01.13 |
申请人 |
STC PLC |
发明人 |
ROKOS, GEORGE HEDLEY STORM |
分类号 |
H01L23/52;H01L21/3205;H01L21/82;H01L21/822;H01L23/535;H01L27/04;H01L27/118 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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