METHOD OF FORMING TRANSPARENT ELECTRODE HAVING IMPROVED TRANSMISSIVITY, AND SEMICONDUCTOR DEVICE INCLUDING TRANSPARENT ELECTRODE FORMED BY USING SAME

摘要

The present invention discloses a method of forming a transparent electrode. A method of forming a transparent electrode according to a preferred embodiment of the present invention forms a metal layer on an ITO transparent electrode that is the most widely used type of transparent electrode by using a metal in a period lower than Indium in the periodic table, and permeating metals forming the metal layer through heat treatment into the ITO transparent electrode to expand the effective bandgap, so as to have the effects of expanding the transmissivity of the transparent electrode to the ultraviolet range and, at the same time, improving the conductivity of the overall transparent electrode by virtue of the metals permeated into the ITO transparent electrode. This method of forming a transparent electrode of the present invention can improve the transmissivity and the conductivity of a transparent electrode by only adding a simple process of forming a metal layer and a heat treating process to a conventional process of forming a transparent electrode, without adding a complicated patterning or etching process, so as to have the advantage of being directly applicable to transparent electrode forming processes being commercialized.