Redundant circuit incorporated in semiconductor memory device.

摘要

A redundant circuit incorporated in a non-volatile memory device has two memory transistors (34 and 37) for memorizing a bit of address information one of which is used in a diagnostic operation of component circuits executed before the packaging and the other of which is used for memorizing a bit of address information assigned to a defective memory cell after the packaging, and, for this reason, the other memory transistor is free from the degradation due to the heat attack encountered in the packaging process.