发明名称 PHOTORESIST COMPOSITION
摘要 PURPOSE:To improve the sensitivity of the title composition at the time of using the composition for lithography, and the allowability of the composition against an alkaline development condition at the time of developing it by incorporating an alkali soluble resin having silyl ether group, a specified diazohomotetramic acid derivative and a compd. capable of generating an acid by irradiating active rays in the composition. CONSTITUTION:The composition is composed of the alkali-soluble resin having the silyl ether group, the diazohomotetramic acid derivative shown by formula I and the compd. capable of generating the acid by irradiating the active rays. In formula I, R1 is a n-valent org. group, (n) is an integer of 1-6. And, the alkali-soluble resin is released a SiO bond in the presence of the acid, and formed a hydroxyl group. As the result, the solubility of the resin for an alkaline aqueous solution increases. And, the diazohomotetramic acid derivative acts as a retarding agent fore the alkali solubility of the composition. Thus, the composition has the high sensitivity for the lithography using a deep UV ray and an excimer laser as a light source, and the excellent allowability against the alkali development.
申请公布号 JPH01300249(A) 申请公布日期 1989.12.04
申请号 JP19880130074 申请日期 1988.05.30
申请人 TOSOH CORP 发明人 YAMAMOTO TAKASHI;KIYOTA TORU;TODOKO MASAAKI;NAGAOKA KEIKO
分类号 G03C1/72;G03F7/039;G03F7/075;G03F7/20 主分类号 G03C1/72
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