| 摘要 |
<p>Process for the production of semiconductor devices, comprising at least one stage of reactive ion etching of a said substrate composed of semiconductive compounds of general formulae Ga1-xAsxIn1-yPy, in which x and y are the concentrations and are between 0 and 1, this process comprising, for the application of this etching, a system for masking the said substrate interacting with a flow of reactant gases, characterised in that the masking system is composed of a first titanium (Ti) metal layer of low thickness, surmounted by a second nickel (Ni) metal layer which is approximately 10 times thicker, and in that the flow of reactant gases is composed of the gas mixture Cl2/CH4/H2/Ar, in which mixture Cl2 is in proportions of approximately a quarter of those of CH4 and Ar, insofar as the partial pressures in the etching chamber are concerned.
<??>Application: production of electrooptical devices made of III-V materials
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